BF245A datasheet pdf

1996 Jul 302 NXP SemiconductorsProduct specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES Interchangeability of drain and source connections Frequencies up to 700 MHz. APPLICATIONS LF, HF and DC amplifiers. DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINSYMBOLDESCRIPTION 1ddrain 2ssource 3ggate Fig.1Simplified outline (TO-92 variant) and symbol. handbook, halfpage 1 3 2 MAM257 s d g QUICK REFERENCE DATA SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT V DS drain-source voltage30V V GSoff gate-source cut-off voltageI D =10nA; V DS =15V0.258V V GSO gate-source voltageopen drain30V I DSS drain currentV DS =15V; V GS =0 BF245A26.5mA BF245B615mA BF245C1225mA P tot total power dissipationT amb =75C300mW y fs forward transfer admittanceV DS =15V; V GS =0; f=1kHz; T amb =25C 36.5mS C rs reverse transfer capacitanceV DS =20V; V GS =1V; f=1MHz; T amb =25C 1.1pF

Specifications