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©2003 Fairchild Semiconductor CorporationRev. A1, June 2003 BF245A/BF245B/BF245C Absolute Maximum Ratings T a =25°C unless otherwise noted Electrical Characteristics T a =25°C unless otherwise noted SymbolParameterValueUnits V DG Drain-Gate Voltage30V V GS Gate-Source Voltage-30V I GF Forward Gate Current10mA P D Total Device Dissipation @T A =25°C Derate above 25°C 350 2.8 mW mW/°C T J, T STG Operating and Storage Junction Temperature Range- 55 ~ 150°C SymbolParameterTest ConditionMin.Max.Units Off Characteristics V (BR)GSS Gate-Source Breakdown VoltageV DS = 0, I G = 1μA-30V V GS Gate-Source BF245A BF245B BF245C V DS = 15V, I D = 200μA-0.4 -1.6 -3.2 -2.2 -3.8 -7.5 V V GS (off)Gate-Source Cut-off VoltageV DS = 15V, I D = 10nA-0.5-8V I GSS Gate Reverse CurrentV GS = -20V, V GS = 0-5nA On Characteristics I DSS Zero-Gate Voltage Drain Current BF245A BF245B BF245C V GS = 15V, V GS = 02 6 12
6.5 15 25 mA On Characteristics g fs Common Source Forward Transconductance V GS = 15V, V GS = 0, f = 1KHz36.5mmhos BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1. Gate 2. Source 3. Drain TO-92 1