BF256A (1) datasheet pdf

©2003 Fairchild Semiconductor CorporationRev. A, June 2003 BF256A/BF256B/BF256C Absolute Maximum Ratings T a =25°C unless otherwise noted Electrical Characteristics T a =25°C unless otherwise noted SymbolParameterValueUnits V DG Drain-Gate Voltage30V V GS Gate-Source Voltage-30V I GF Forward Gate Current10mA P D Total Device Dissipation @T A =25°C Derate above 25°C 350 2.8 mW mW/°C T STG Operating and storage Temperature Range- 55 ~ 150°C SymbolParameterTest ConditionMin.Max.Units Off Characteristics V (BR)GSS Gate-Source Breakdown VoltageV DS = 0, I G = 1μA-30V V GS Gate-SourceV DS = 15V, I D = 200μA-0.5-7.5V V GS (off)Gate-Source Cutoff VoltageV DS = 15V, I D = 10nA-0.5-8V I GSS Gate Reverse CurrentV GS = -20V, V GS = 0-5nA On Characteristics I DSS Zero-Gate Voltage Drain Current BF256A BF256B BF256C V GS = 15V, V GS = 03 6 11

Specifications

7 13 18 mA Small Signal Characteristics gfsCommon Source Forward TransconductanceV DS = 15V, V GS = 0, f = 1KHz4.5mmhos BF256A/BF256B/BF256C N-Channel RF Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1. Gate 2. Source 3. Drain 1