BF256B (1) datasheet pdf

BF256B — N-Channel RF Amplifiers © 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com BF256B Rev. 1.1.0 November 2014 BF256B N-Channel RF Amplifiers Features • This device is designed for VHF / UHF amplifiers • Sourced from process 50 Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Thermal Characteristics Values are at T A = 25°C unless otherwise noted. Part NumberTop MarkPackagePacking Method BF256BBF256BTO-92 3LBulk SymbolParameterValueUnit V DG Drain-Gate Voltage30V V GS Gate-Source Voltage-30V I GF Forward Gate Current10mA T J , T STG Operating and Storage Temperature Range-55 to 150°C SymbolParameterValueUnit P D Total Device Dissipation at T A = 25°C350mW Derate Above 25°C2.8mW/°C TO-92 1. Gate 2. Source 3. Drain 1

Features

• • This device is designed for VHF / UHF amplifiers
• • Sourced from process 50
• 1. Gate 2. Source 3. Drain