BF393 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 300Vdc Collector – Base VoltageV CBO 300Vdc Emitter – Base VoltageV EBO 6.0Vdc Collector Current — ContinuousI C 500mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B =0) V (BR)CEO 300— Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 300— Vdc Emitter – Base Breakdown Voltage (I E = 100 mAdc, I C = 0) V (BR)EBO 6.0— Vdc Collector Cutoff Current (V CB = 200 Vdc, I E = 0) I CBO —0.1 μAdc Emitter Cutoff Current (V EB = 6.0 Vdc, I C = 0) I EBO —0.1 μAdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Order this document by BF393/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF393 CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1997 COLLECTOR 3 2 BASE 1 EMITTER (Replaces BF392/D)

Specifications