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Publication Order Number: BF421/D © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 5 1 BF421, BF423 High Voltage Transistors PNP Silicon Features •These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS RatingSymbolBF421BF423Unit Collector−Emitter VoltageV CEO −300−250Vdc Collector−Base VoltageV CBO −300−250Vdc Emitter−Base VoltageV EBO −5.0Vdc Collector Current − ContinuousI C −500mAdc Collector Current − PeakI CM 100mA Total Device Dissipation (Note 1) @ T A = 25°C Derate above 25°C P D 830 6.6 mW mW/°C Operating and Storage Junction Temperature Range T J , T stg −55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Ambient R q JA 150 °C/W Thermal Resistance, Junction−to−Lead R q JL 68 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm 2 of 1 oz copper and lead length of 5 mm. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com MARKING DIAGRAM BF42x = Device Code x = 1 or 3 A= Assembly Location Y= Year WW= Work Week G=Pb−Free Package TO−92 CASE 29 STYLE 14 COLLECTOR 2 3 BASE 1 EMITTER BF 42x AYWWG G DevicePackageShipping ORDERING INFORMATION (Note: Microdot may be in either location) BF421ZL1GTO−92 (Pb−Free) 2000/Ammo Pack BF423GTO−92 (Pb−Free) 5000 Units/Box BF423ZL1GTO−92 (Pb−Free) 2000/Ammo Pack 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3