BF421 (3) datasheet pdf

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BF421 (3) datasheet pdf

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Semiconductor Group1 PNP Silicon Transistors BF 421 With High Reverse VoltageBF 423 5.91 Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BF 421 BF 423 Q62702-F532 Q62702-F496 –TO-92 123 ECB 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. ParameterSymbol ValuesUnit Collector-emitter voltageV CE0V Collector currentICmA Junction temperatureTj ̊C Total power dissipation,T C = 88 ̊CPtotmW Storage temperature rangeT stg Collector-emitter voltage RBE = 2.7 k VCER Thermal Resistance Junction - ambientRth JA≤ 150K/W 50 830 150 – 65 ... + 150 Collector-base voltageV CB0 –250 300– BF 421BF 423 Peak base currentI BM100 300250 Emitter-base voltageVEB05 Junction - case 2) Rth JC≤ 75 lHigh breakdown voltage lLow collector-emitter saturation voltage lLow capacitance lComplementary types: BF 420, BF 422 (NPN) 1 2 3

Specifications
Semiconductor Group1 PNP Silicon Transistors BF 421 With High Reverse VoltageBF 423 5.91 Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BF 421 BF 423 Q62702-F532 Q62702-F496 –TO-92 123 ECB 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. ParameterSymbol ValuesUnit Collector-emitter voltageV CE0V Collector currentICmA Junction temperatureTj ̊C Total power dissipation,T C = 88 ̊CPtotmW Storage temperature rangeT stg Collector-emitter voltage RBE = 2.7 k VCER Thermal Resistance Junction - ambientRth JA≤ 150K/W 50 830 150 – 65 ... + 150 Collector-base voltageV CB0 –250 300– BF 421BF 423 Peak base currentI BM100 300250 Emitter-base voltageVEB05 Junction - case 2) Rth JC≤ 75 lHigh breakdown voltage lLow collector-emitter saturation voltage lLow capacitance lComplementary types: BF 420, BF 422 (NPN) 1 2 3