BF422 (2) datasheet pdf

Semiconductor Group1 NPN Silicon Transistors BF 420 With High Reverse VoltageBF 422 5.91 Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BF 420 BF 422 Q62702-F531 Q62702-F495 –TO-92 123 ECB 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. ParameterSymbol ValuesUnit Collector-emitter voltageV CE0V Collector currentICmA Junction temperatureTj ̊C Total power dissipation,T C = 88 ̊CPtotmW Storage temperature rangeT stg Collector-emitter voltage RBE = 2.7 k VCER Thermal Resistance Junction - ambientRth JA≤ 150K/W 50 830 150 – 65 ... + 150 Collector-base voltageV CB0 –250 300– BF 420BF 422 Peak base currentI BM100 300250 Emitter-base voltageVEB05 Junction - case 2) Rth JC≤ 75 lHigh breakdown voltage lLow collector-emitter saturation voltage lLow capacitance lComplementary types: BF 421, BF 423 (PNP) 1 2 3

Specifications