BF423 (1) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolBF421BF423Unit Collector – Emitter VoltageV CEO –300–250Vdc Collector – Base VoltageV CBO –300–250Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –500mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = –1.0 mAdc, I B = 0)BF421 BF423 V (BR)CEO –300 –250 — — Vdc Collector – Base Breakdown Voltage (I C = –100 mAdc, I E = 0)BF421 BF423 V (BR)CBO –300 –250 — — Vdc Emitter – Base Breakdown Voltage (I E = –100 mAdc, I C = 0)BF421 BF423 V (BR)EBO –5.0 –5.0 — — Vdc Collector Cutoff Current (V CB = –200 Vdc, I E = 0)BF421 BF423 I CBO — — –0.01 — mAdc Emitter Cutoff Current (V EB = –5.0 Vdc, I C = 0)BF421 BF423 I EBO — — –100 — nAdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Order this document by BF421/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF421 BF423 CASE 29–04, STYLE 14 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 2 3 BASE 1 EMITTER

Specifications