BF493S datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistor PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO –350Vdc Collector – Base VoltageV CBO –350Vdc Emitter – Base VoltageV EBO –6.0Vdc Collector Current — ContinuousI C –500mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 Watts mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = –1.0 mAdc, I B = 0) V (BR)CEO –350—Vdc Collector – Base Breakdown Voltage (I C = –100 mAdc, I E = 0) V (BR)CBO –350—Vdc Emitter – Base Breakdown Voltage (I E = –100 mAdc, I C = 0) V (BR)EBO –6.0—Vdc Collector Cutoff Current (V CE = –250 Vdc) I CES —–10nAdc Emitter Cutoff Current (V EB = –6.0 Vdc, I C = 0) I EBO —0.1 mAdc Collector Cutoff Current (V CB = –250 Vdc, I E = 0, T A = 25°C) (V CB = –250 Vdc, I E = 0, T A = 100°C) I CBO — — –0.005 –1.0 mAdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Order this document by BF493S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF493S CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER

Specifications