BF660 datasheet pdf

Semiconductor Group1 PNP Silicon RF Transistor BF 660 lFor VHF oscillator applications Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BF 660Q62702-F982LEsSOT-23 123 BEC ParameterSymbolValuesUnit Collector-emitter voltageV CE030V Collector-base voltageVCB040 Emitter-base voltageV EB04 Thermal Resistance Junction - ambient 2) Rth JA≤ 450K/W Total power dissipation,TA≤ 25 ̊CPtot280mW Storage temperature rangeT stg– 65 ... + 150 Emitter currentIE30 Junction temperatureT j150 ̊C Collector currentIC25mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 07.94

Specifications