Semiconductor Group1Aug-14-1996
BF 660W
≤
93 °C
P
tot
280
mW
Junction temperatureT
j
150°C
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering pointR
thJS
205K/W
Specifications
PNP Silicon RF Transistor
• For VHF oscillator applications
TypeMarkingOrdering CodePin ConfigurationPackage
BF 660WLEsQ62702-F15681 = B2 = E3 = CSOT-323
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
30V
Collector-base voltageV
CBO
40
Emitter-base voltageV
EBO
4
Collector currentI
C
25mA
Base currentI
B
5
Total power dissipation
T
S