BF660W datasheet pdf

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BF660W datasheet pdf

Datasheet Information

Pages: 4

Semiconductor Group1Aug-14-1996 BF 660W

≤ 93 °C P tot 280 mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering pointR thJS 205K/W

Specifications
PNP Silicon RF Transistor • For VHF oscillator applications TypeMarkingOrdering CodePin ConfigurationPackage BF 660WLEsQ62702-F15681 = B2 = E3 = CSOT-323 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 30V Collector-base voltageV CBO 40 Emitter-base voltageV EBO 4 Collector currentI C 25mA Base currentI B 5 Total power dissipation T S