BF720T1 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN Silicon Transistor MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter VoltageV CEO 300Vdc Collector-Base VoltageV CBO 300Vdc Collector-Emitter VoltageV CER 300Vdc Emitter-Base VoltageV EBO 5.0Vdc Collector CurrentI C 100mAdc Total Power Dissipation up to T A = 25°CP D 1.5Watts Storage Temperature RangeT stg – 65 to +150°C Junction TemperatureT J 150°C DEVICE MARKING DC THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance from Junction-to-Ambient (1) R θJA 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristics SymbolMinMaxUnit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0) V (BR)CEO 300—Vdc Collector-Base Breakdown Voltage (I C = 100 μAdc, I E = 0) V (BR)CBO 300—Vdc Collector-Emitter Breakdown Voltage (I C = 100 μAdc, R BE = 2.7 kΩ) V (BR)CER 300—Vdc Emitter-Base Breakdown Voltage (I E = 10 μAdc, I C = 0) V (BR)EBO 5.0—Vdc Collector-Base Cutoff Current (V CB = 200 Vdc, I E = 0) I CBO —10nAdc Collector–Emitter Cutoff Current (V CE = 250 Vdc, R BE = 2.7 kΩ) (V CE = 200 Vdc, R BE = 2.7 kΩ, T J = 150°C) I CER — — 50 10 nAdc μAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in 2 . Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by BF720T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1996 BF720T1 NPN SILICON TRANSISTOR SURFACE MOUNT Motorola Preferred Device CASE 318E-04, STYLE 1 SOT–223 (TO-261AA) 1 2 3 4 COLLECTOR 2,4 BASE 1 EMITTER 3 REV 2

Specifications