≤
63 °C
P
tot
300
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
290K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-12-1996
BF 770A
NPN Silicon RF Transistor
• For IF amplifiers in TV-sat tuners
and for VCR modulators
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BF 770ALSsQ62702-F11241 = B2 = E3 = C SOT-23
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
50mA
Base currentI
B
6
Total power dissipation
T
S