please refer to Application Note Thermal Resistance
Specifications
2007-04-20
1
BF770A
1
2
3
NPN Silicon RF Transistor
• For IF amplifiers in TV-sat tuners
and for VCR modulators
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypeMarkingPin ConfigurationPackage
BF770ALSs
1 = B2 = E3 = C
SOT23
Maximum Ratings
ParameterSymbolValueUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
90mA
Base currentI
B
9
Total power dissipation
2)
T
S
≤ 63°C
P
tot
300mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
-65 ... 150
Storage temperatureT
stg
-65 ... 150
Thermal Resistance
Parameter
SymbolValueUnit
Junction - soldering point
3)
R
thJS
≤ 290
K/W
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA