BF841 datasheet pdf

Semiconductor Group1 NPN Silicon RF Transistors BF 840 BF 841 lSuitable for common emitter RF, IF amplifiers lLow collector-base capacitance due to contact shield diffusion lLow output conductance Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BF 840Q62702-F1240NCSOT-23 123 BEC BF 841Q62702-F1287ND ParameterSymbolValuesUnit Collector-emitter voltageV CE040V Collector-base voltageVCB040 Emitter-base voltageV EB04 Thermal Resistance Junction - ambient 2)Rth JA≤ 450K/W Total power dissipation,TA≤ 25 ̊C 2) Ptot280mW Storage temperature rangeT stg– 65 ... + 150 Base currentIB2 Junction temperatureT j150 ̊C Collector currentIC25mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 07.94

Specifications