BF844 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 400Vdc Collector – Base VoltageV CBO 450Vdc Emitter – Base VoltageV EBO 6.0Vdc Collector Current — ContinuousI C 300mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 400—Vdc Collector – Emitter Breakdown Voltage (I C = 100 μAdc, V BE = 0) V (BR)CES 450—Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 450—Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 6.0—Vdc Collector Cutoff Current (V CB = 400 Vdc, I E = 0) I CBO —0.1μAdc Collector Cutoff Current (V CE = 400 Vdc, V BE = 0) I CES —500nAdc Emitter Cutoff Current (V EB = 4.0 Vdc, I C = 0) I EBO —0.1μAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Order this document by BF844/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF844 CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER

Specifications