BF959 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data VHF Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 20Vdc Collector – Base VoltageV CBO 30Vdc Emitter – Base VoltageV EBO 3.0Vdc Collector Current — ContinuousI C 100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0)V (BR)CEO 20——Vdc Collector – Base Breakdown Voltage (I C = 10 mAdc, I E = 0) V (BR)CBO 30——Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 3.0——Vdc Collector Cutoff Current (V CB = 20 Vdc, I E = 0)I CBO ——100nAdc ON CHARACTERISTICS DC Current Gain (I C = 5.0 mAdc, V CE = 10 Vdc) (I C = 20 mAdc, V CE = 10 Vdc) h FE 35 40 — — — — — Collector – Emitter Saturation Voltage (I C = 30 mAdc, I B = 2.0 mAdc)V CE(sat) ——1.0Vdc Base – Emitter Saturation Voltage (I C = 30 mAdc, I B = 2.0 mAdc)V BE(sat) ——1.0Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz) (I C = 30 mAdc, V CE = 10 Vdc, f = 100 MHz) f T 700 600 — — — — MHz Common Emitter Feedback Capacitance (V CB = 10 Vdc, P f = 0, f = 10 MHz) C re —0.65—pF Noise Figure (I C = 4.0 mA, V CE = 10 V, R S = 50 Ω, f = 200 MHz)N f —3.0—dB Order this document by BF959/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF959 CASE 29–04, STYLE 21 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 3 BASE 2 EMITTER

Specifications