BF970 datasheet pdf

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BF970 datasheet pdf

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BF970 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (5) Document Number 85005 Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features DHigh gain DLow noise 94 9308 1 3 2 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter 13623 Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltage–V CBO 40V Collector-emitter voltage–V CEO 35V Emitter-base voltage–V EBO 3V Collector current–I C 30mA Total power dissipationT amb ≤ 60 °CP tot 300mW Junction temperatureT j 150°C Storage temperature rangeT stg –55 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35mm Cu R thJA 300K/W

Specifications
BF970 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (5) Document Number 85005 Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features DHigh gain DLow noise 94 9308 1 3 2 BF970 Marking: BF970 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter 13623 Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltage–V CBO 40V Collector-emitter voltage–V CEO 35V Emitter-base voltage–V EBO 3V Collector current–I C 30mA Total power dissipationT amb ≤ 60 °CP tot 300mW Junction temperatureT j 150°C Storage temperature rangeT stg –55 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35mm Cu R thJA 300K/W