BF998 (2) datasheet pdf

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BF998 (2) datasheet pdf

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Semiconductor Group1 04.96 Silicon N Channel MOSFET Tetrode BF 998 Features lShort-channel transistor with high S/C quality factor lFor low-noise, gain-controlled input stages up to 1 GHz Maximum Ratings TypeMarking Package 1) Pin Configuration BF 998Q62702-F1129MOSOT-143 1234 SDG2G1 Ordering Code (tape and reel) ParameterSymbolValuesUnit Drain-source voltageV DS12V Thermal Resistance Junction - soldering point R th JS< 370K/W Total power dissipation,TS < 76 ̊CPtot200mW Storage temperature rangeT stg– 55 ... + 150 ̊C Gate 1/gate 2 peak source current ±IG1/2SM10 Channel temperatureTch150 mADrain currentID30 1) For detailed information see chapter Package Outlines.

Specifications
Semiconductor Group1 04.96 Silicon N Channel MOSFET Tetrode BF 998 Features lShort-channel transistor with high S/C quality factor lFor low-noise, gain-controlled input stages up to 1 GHz Maximum Ratings TypeMarking Package 1) Pin Configuration BF 998Q62702-F1129MOSOT-143 1234 SDG2G1 Ordering Code (tape and reel) ParameterSymbolValuesUnit Drain-source voltageV DS12V Thermal Resistance Junction - soldering point R th JS< 370K/W Total power dissipation,TS < 76 ̊CPtot200mW Storage temperature rangeT stg– 55 ... + 150 ̊C Gate 1/gate 2 peak source current ±IG1/2SM10 Channel temperatureTch150 mADrain currentID30 1) For detailed information see chapter Package Outlines.