BF998, BF998R
BF998W
R
thchs
≤ 370
≤ 280
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Specifications
Feb-13-2004
1
BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypePackagePin ConfigurationMarking
BF998
BF998R
BF998W
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
MOs
MRs
MR
Maximum Ratings
Parameter
SymbolValueUnit
Drain-source voltageV
DS
12V
Continuous drain currentI
D
30mA
Gate 1/ gate 2-source current±I
G1/2SM
10
Total power dissipation
T
S
≤ 76 °C, BF998, BF998R
T
S
≤ 94 °C, BF998W
P
tot
200
200
Storage temperatureT
stg
-55 ... 150
°C
Channel temperatureT
ch
150
Thermal Resistance
Parameter
SymbolValueUnit
Channel - soldering point
1)