BF998W (1) datasheet pdf

BF998W (1) datasheet pdf PDF Viewer

Loading PDF...

BF998W (1) datasheet pdf

Datasheet Information

Pages: 6

BF998, BF998R BF998W R thchs

≤ 370 ≤ 280 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications
Feb-13-2004 1 BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypePackagePin ConfigurationMarking BF998 BF998R BF998W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - MOs MRs MR Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 12V Continuous drain currentI D 30mA Gate 1/ gate 2-source current±I G1/2SM 10 Total power dissipation T S ≤ 76 °C, BF998, BF998R T S ≤ 94 °C, BF998W P tot

200 200 Storage temperatureT stg -55 ... 150 °C Channel temperatureT ch 150 Thermal Resistance Parameter SymbolValueUnit Channel - soldering point 1)