Manufacturer
Unknown
File Size
133.97 KB
Updated
Oct 22, 2025, 03:25 PM
Our procurement experts can help you find the best options and pricing.
Discover drop-in replacements and equivalent components
Get current stock levels and competitive quotes
Expert guidance on specifications and compatibility
Email us directly
support@all-datasheet-pdf.com
Response time: Typically within 24 hours during business days
Loading PDF...
Pages: 5
BF999 Nov-08-20021 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications 1 2 3 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BF999LBs1 = G2 = D3 = SSOT23 Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 20V Drain currentI D 30mA Gate-source peak currentI GSM 10mA Total power dissipation, T S 76 °C P tot 200mW Storage temperatureT stg -55 ... 150 °C Channel temperatureT ch 150 Thermal Resistance Channel - soldering point 1) R thchs 370K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.