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1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC
0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819)21.46 (0.845) 6.15 (0.242) BSC 19.81 (0.780)20.32 (0.800) 4.50 (0.177) Max.
2.87 (0.113) 3.12 (0.123) TO247–AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation Operating and Storage Junction Temperature Range V GS = 0V , I D = 1mA V GS =10V , I D = 1A V DS = 1200V , V GS = 0V V GS = ±20V , V DS = 0V V DS = 10V , I D = 1.0mA V DS = 20V f = 1MHz V GS = 10V I D = 1A V GS = 0 , I S = 2A V DS = 20V , I D = 1A N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 1500 2 4 ±20 50 –55 to +150 V A A V W °C Drain – Source Breakdown Voltage Drain – Source On State Resistance Zero Gate Voltage Drain Current Gate – Source Leakage Current Cutoff Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Diode Forward Voltage Forward Transfer Admittance 1500 8.011.0 100 ±100 1.53.5 550 90 30 30 200 1.01.5 1.01.5 V W mA nA V pF ns V S ABSOLUTE MAXIMUM RATINGS (T AMB = 25°C unless otherwise stated) ELECTRICAL CHARACTERISTICS (T AMB = 25°C unless otherwise stated) V DSS 1500V I D(cont) 2A R DS(on) 8.00WW WW Pin 1 – GatePin 2 – DrainPin 3 – Source