BFC60 datasheet pdf

BFC60 LAB SEME Semelab plc.Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/96 CharacteristicTest ConditionsMin.Typ.Max. Unit BV DSS R DS(ON) I DSS I GSS V GS(off) C iss C oss C rss t on t off V SD |Y FS | V DSS I D I DM V GS P D T J , T STG 123 16.51 (0.650)14.22 (0.560) 3.05 (0.120) 2.54 (1.000) 10.67 (0.420) 9.65 (0.380) 5.33 (0.210) 4.83 (0.190) 6.86 (0.270)5.84 (0.230) 4.83 (0.190) 3.56 (0.140) 1.40 (0.020) 0.51 (0.055) 3.73 (0.147) 3.53 (0.139) Dia. 1.78 (0.070) 0.99 (0.390) 6.35 (0.250)4.60 (0.181) 14.73 (0.580)12.70 (0.500) 1.02 (0.040) 0.38 (0.015) 2.54 (0.100) Nom. 5.08 (0.200) Nom. 0.66 (0.026) 0.41 (0.016) 2.92 (0.115) 2.03 (0.080) 2 TO220–AC Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current Gate – Source Voltage Total Power Dissipation Operating and Storage Junction Temperature Range V GS = 0V , I D = 1mA V GS =10V , I D = 50mA V DS = 1200V , V GS = 0V V GS = ±20V , V DS = 0V V DS = 10V , I D = 1.0mA V DS = 20V f = 1MHz V GS = 10V I D = 50mA V GS = 0 , I S = 0.1A V DS = 20V , I D = 50mA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 1500 0.1 0.2 ±20 20 –55 to +150 V A A V W °C Drain – Source Breakdown Voltage Drain – Source On State Resistance Zero Gate Voltage Drain Current Gate – Source Leakage Current Cutoff Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Diode Forward Voltage Forward Transfer Admittance 1500 140200 100 ±100 1.53.5 40 12 3.0 40 400 1.01.5 50100 V Ω μA nA V pF ns V mS ABSOLUTE MAXIMUM RATINGS (T AMB = 25°C unless otherwise stated) ELECTRICAL CHARACTERISTICS (T AMB = 25°C unless otherwise stated) V DSS 1500V I D(cont) 0.1A R DS(on) 140 ΩΩ Pin 1 – GatePin 2 – DrainPin 3 – Source

Specifications