BFG135A datasheet pdf

BFG135A datasheet pdf PDF Viewer

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BFG135A datasheet pdf

Datasheet Information

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≤ 100 °C P tot 1000 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 50K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-16-1996 BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • f T = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 135ABFG135AQ62702-F13221 = E2 = B3 = E 4 = CSOT-223 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 150mA Base currentI B 20 Total power dissipation T S