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BFG 135A Oct-26-19991 NPN Silicon RF Transistor For low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f T = 6 GHz VPS05163 1 2 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFG 135ABFG135A1 = E2 = B3 = E4 = CSOT-223 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 150mA Base currentI B 20 Total power dissipation, T S 100 °C F) P tot 1W Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point R thJS 50 K/W 1 T S is measured on the collector lead at the soldering point to the pcb
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