BFG193 datasheet pdf

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Oct 22, 2025, 03:25 PM

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BFG193 datasheet pdf

Datasheet Information

Pages: 6

≤ 87 °C P tot 600 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 105K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-13-1996 BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f T = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 193BFG193Q62702-F12911 = E2 = B3 = E4 = CSOT-223 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 10 Total power dissipation T S
Category: Sensors & MEMS·View all categories

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