BFG193 (1) datasheet pdf

BFG193 Jun-27-20011 NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
f T = 8 GHz F = 1.3 dB at 900 MHz VPS05163 1 2 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFG193BFG1931 = E2 = B3 = E4 = C SOT223 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 80mA Base currentI B 10 Total power dissipation T S
87 °C 1) P tot 600mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS
105 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications