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Semiconductor Group1Aug-22-1996 BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 194BFG194Q62702-F13211 = E2 = B3 = E 4 = CSOT-223 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-base voltageV CBO 20 Emitter-base voltageV EBO 3 Collector currentI C 100mA Base currentI B 10 Total power dissipation T S ≤ 75 °C P tot 1000 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 75K/W 1) T S is measured on the collector lead at the soldering point to the pcb.