BFG196 datasheet pdf

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BFG196 datasheet pdf

Datasheet Information

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Semiconductor Group1Dec-13-1996 BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f T = 7.5GHz

≤ 90 °C P tot 800 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 75K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 196BFG196Q62702-F12921 = E2 = B3 = E 4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 100mA Base currentI B 12 Total power dissipation T S