Loading PDF...
Pages: 6
BFG196 Jun-27-20011 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN Systems f T = 7.5 GHz F = 1.5 dB at 900 GHz VPS05163 1 2 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFG196BFG1961 = E2 = B3 = E4 = C SOT223 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 100mA Base currentI B 12 Total power dissipation T S 90 °C 1) P tot 800mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 75 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance