BFG19S datasheet pdf

BFG19S datasheet pdf PDF Viewer

Loading PDF...

BFG19S datasheet pdf

Datasheet Information

Pages: 6

≤ 75 °C P tot 1 W Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 75K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-13-1996 BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 19SBFG19SQ62702-F13591 = E2 = B3 = E 4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 3 Collector currentI C 100mA Base currentI B 12 Total power dissipation T S