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BFG 19S Oct-26-19991 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA VPS05163 1 2 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFG 19SBFG19S1 = E2 = B3 = E4 = CSOT-223 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 3 Collector currentI C 100mA Base currentI B 12 Total power dissipation, T S 75 °C 1) P tot 1W Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point R thJS 75 K/W 1 T S is measured on the collector lead at the soldering point to the pcb