≤
80 °C
P
tot
2000
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
35K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-13-1996
BFG 235
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
•
f
T
= 5.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFG 235BFG235Q62702-F14321 = E2 = B3 = E 4 = CSOT-223
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-emitter voltageV
CES
25
Collector-base voltageV
CBO
25
Emitter-base voltageV
EBO
2
Collector currentI
C
300mA
Base currentI
B
40
Total power dissipation
T
S