BFG235 datasheet pdf

BFG235 datasheet pdf PDF Viewer

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BFG235 datasheet pdf

Datasheet Information

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≤ 80 °C P tot 2000 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 35K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-13-1996 BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • f T = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFG 235BFG235Q62702-F14321 = E2 = B3 = E 4 = CSOT-223 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 300mA Base currentI B 40 Total power dissipation T S