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BFG 235 Oct-27-19991 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f T = 5.5 GHz VPS05163 1 2 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFG 235BFG2351 = E2 = B3 = E4 = CSOT-223 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 25 Collector-base voltageV CBO 25 Emitter-base voltageV EBO 2 Collector currentI C 300mA Base currentI B 40 Total power dissipation, T S 80 °C F) P tot 2W Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point R thJS 35 K/W 1 T S is measured on the collector lead at the soldering point to the pcb