BFG67 (1) datasheet pdf

BFG67 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 1, 11-Nov-99 1 (4) Document Number 85074 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features DSmall feedback capacitance DLow noise figure DHigh transition frequency 13 579 21 43 94 9279 BFG67 Marking: V3 Plastic case (SOT 143) 1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageV CBO 20V Collector-emitter voltageV CEO 10V Emitter-base voltageV EBO 2.5V Collector currentI C 50mA Total power dissipationT amb ≤ 60 °CP tot 200mW Junction temperatureT j 150°C Storage temperature rangeT stg –65 to +150°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35mm Cu R thJA 450K/W

Features

• 2.5V