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Semiconductor Group1 NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BFN 16 BFN 18 Q62702-F885 Q62702-F1056 DD DE SOT-89 123 BCE 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm× 1.5 mm/6 cm 2 Cu. ParameterSymbol BFN 16 Unit Collector-emitter voltageV CE0250V Collector-base voltageVCB0250 Emitter-base voltageV EB0 Collector currentICmA Base currentI B Total power dissipation,TS= 130 ̊CPtotW Junction temperatureT j ̊C Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambient 2) Rth JA≤ 75K/W Peak collector currentI CM Peak base currentIBM BFN 18 300 300 200 100 1 150 500 200 Values 5 Junction - soldering point R th JS≤ 20 lSuitable for video output stages in TV sets and switching power supplies lHigh breakdown voltage lLow collector-emitter saturation voltage lComplementary types: BFN 17, BFN 19 (PNP) 5.91