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BFN17, BFN19 Nov-30-20011 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN16, BFN18 (NPN) 2 1 3 VPS05162 2 TypeMarkingPin ConfigurationPackage BFN17 BFN19 DG DH 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN17BFN19 Unit Collector-emitter voltageV CEO 250300V Collector-base voltageV CBO 250300 Emitter-base voltageV EBO 55 DC collector currentI C 200mA 500I CM Peak collector current Base currentI B 100 I BM 200Peak base current WP tot Total power dissipation, T S = 130 °C1 Junction temperature150°CT j T stg -65 ... 150Storage temperature Thermal Resistance Junction - soldering point 1) R thJS 20K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance