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BFN16, BFN18 Nov-30-20011 NPN Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN17, BFN19 (PNP) 2 1 3 VPS05162 2 TypeMarkingPin ConfigurationPackage BFN16 BFN18 DD DE 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E SOT89 SOT89 Maximum Ratings Parameter Symbol BFN16BFN18 Unit Collector-emitter voltageV CEO 250300V Collector-base voltageV CBO 250300 Emitter-base voltageV EBO 55 DC collector currentI C 200mA I CM 500Peak collector current 100I B Base current Peak base current200I BM P tot 1Total power dissipation, T S = 130 °CW °CJunction temperatureT j 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 20K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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