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2011-09-30 1 BFN19 1 2 2 3 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN18 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 TypeMarkingPin ConfigurationPackage BFN19DH 1=B2=C3=E SOT89 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 300V Collector-base voltageV CBO 300 Emitter-base voltageV EBO 5 Collector currentI C 200mA Peak collector current, t p ≤ 10 msI CM 500 Base currentI B 100 Peak base currentI BM 200 Total power dissipation- T S ≤ 130 °C P tot 1W Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 1) R thJS ≤ 20 K/W 1 For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)