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BFN 23 Semiconductor Group1 PNP Silicon High-Voltage Transistor BFN 23 Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BFN 23Q62702-F1064HCsSOT-23 BEC 123 ParameterSymbolValuesUnit Collector-emitter voltageV CE0250V Collector-base voltageVCB0250 Collector-emitter voltage,R BE = 2.7 kΩVCER250 Collector currentI C50mA Total power dissipation,T S=71 ̊C P tot360mW Junction temperatureT j150 ̊C Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambient 2) Rth JA≤ 290K/W Junction - soldering pointRth JS≤ 220 Emitter-base voltageVEB05 Peak collector currentICM100 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm×40 mm×1.5 mm/6 cm 2 Cu. lSuitable for video output stages in TV sets and switching power supplies lHigh breakdown voltage lLow collector-emitter saturation voltage lLow capacitance lComplementary type: BFN 22 (NPN) 5.91