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1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 12 01.11.2003 BFN 23High Voltage Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung250 mW Plastic caseSOT-23 Kunststoffgehäuse(TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B2 = E3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25C)Grenzwerte (T A = 25C) BFN 23 Collector-Emitter-voltageB open- V CE0 250 V Collector-Base-voltageE open- V CB0 250 V Collector-Emitter-voltageR BE = 2.7 k- V CER 250 V Emitter-Base-voltageC open- V EB0 5 V Power dissipation – VerlustleistungP tot 250 mW 1 ) Collector current – Kollektorstrom (dc)- I C 50 mA Peak Collector current – Kollektor-Spitzenstrom- I CM 100 mA Junction temperature – SperrschichttemperaturT j 150C Storage temperature – LagerungstemperaturT S - 65...+ 150C Characteristics (T j = 25C)Kennwerte (T j = 25C) Min.Typ.Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - V CB = 200 V- I CB0 ––100 nA I E = 0, - V CB = 200 V, T j = 150C- I CB0 ––20 A Collector-Base cutoff current – Kollektorreststrom - V CB = 250 V, R BE = 2.7 k- I CBR ––1 A - V CB = 250 V, R BE = 2.7 k, T j = 150C- I CBR ––50 A Emitter-Base cutoff current – Emitterreststrom I C = 0, - V EB = 5 V- I EB0 ––10 A