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BFN36, BFN38 Nov-30-20011 NPN Silicon High-Voltage Transistors Suitabled for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN37, BFN39 (PNP) VPS05163 1 2 3 4 TypeMarkingPin ConfigurationPackage BFN36 BFN38 BFN 36 BFN 38 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter Symbol BFN36BFN38 Unit Collector-emitter voltageV CEO 250300V Collector-base voltageV CBO 250300 Emitter-base voltageV EBO 55 DC collector currentI C 200mA Peak collector currentI CM 500 Base currentI B 100 Peak base currentI BM 200 Total power dissipation, T S = 124 °CP tot 1.5W Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 17K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance