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BFP136W Jun-22-20011 NPN Silicon RF Transistor For power amplifier in DECT and PCN systems f T = 5.5GHz Gold metalization for high reliability VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP136WPAs1 = E2 = C3 = E4 = B SOT343 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 150mA Base current I B 20 Total power dissipation T S 60°C 1) P tot 1000mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 90 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance
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