≤
60 °C
P
tot
1000
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
90K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Jan-20-1997
BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f
T
= 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFP 136WPAsQ62702-F15751 = E2 = C3 = E 4 = BSOT-343
Maximum Ratings
Parameter
SymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
150mA
Base currentI
B
20
Total power dissipation
T
S