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Semiconductor Group1Dec-12-1996 BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
≤ 126 °C P tot 30 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 785K/W 1) T S is measured on the collector lead at the soldering point to the pcb.