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BFP 180W Oct-12-19991 NPN Silicon RF Transistor For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP 180WRDs1 = E2 = C3 = E4 = BSOT-343 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 8V Collector-emitter voltage V CES 10 Collector-base voltage V CBO 10 Emitter-base voltage V EBO 2 Collector current I C 4mA Base current I B 0.5 Total power dissipation, T S 126°C 1) P tot 30mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point R thJS 785 K/W 1 T S is measured on the collector lead at the soldering point to the pcb