≤
75 °C
P
tot
175
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 ... + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 430K/W
1) T
S
is measured on the collector lead at the soldering point to the pcb.
Specifications
Semiconductor Group1Dec-11-1996
BFP 181
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5mA to 12mA
•
f
T
= 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BFP 181RFsQ62702-F12711 = C2 = E3 = B4 = ESOT-143
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
12V
Collector-emitter voltageV
CES
20
Collector-base voltageV
CBO
20
Emitter-base voltageV
EBO
2
Collector currentI
C
20mA
Base currentI
B
2
Total power dissipation
T
S