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BFP181R Jun-21-20011 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA f T = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP181RRFs1 = E2 = C3 = E4 = B SOT143R Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 20mA Base current I B 2 Total power dissipation T S 75 °C 1) P tot 175mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 430 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance