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BFP 181W Oct-12-19991 NPN Silicon RF Transistor For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA f T = 8 GHz F = 1.45 dB at 900 MHz VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP 181WRFs1 = E2 = C3 = E4 = BSOT-343 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 12V Collector-emitter voltage V CES 20 Collector-base voltage V CBO 20 Emitter-base voltage V EBO 2 Collector current I C 20mA Base current I B 2 Total power dissipation, T S 91 °C 1) P tot 175mW Junction temperature T j 150°C Ambient temperature T A -65 ... 150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point R thJS 340 K/W 1 T S is measured on the collector lead at the soldering point to the pcb